Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics

Cristian Ravariu; Daniela Dragomirescu

doi:doi:10.11648/j.bio.s.2015030301.12

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Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics

Cristian Ravariu, Daniela Dragomirescu

Published in American Journal of Bioscience and Bioengineering (Volume 3, Issue 3-1)

Received: 3 March 2015 Accepted: 3 March 2015 Published: 12 March 2015

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Abstract

This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.

Published in	American Journal of Bioscience and Bioengineering (Volume 3, Issue 3-1) This article belongs to the Special Issue Bio-Electronics: Biosensors, Biomedical Signal Processing, and Organic Engineering
DOI	10.11648/j.bio.s.2015030301.12
Page(s)	7-13
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Organic Transistors, Simulations, Bioelectronics

References

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APA Style

Cristian Ravariu, Daniela Dragomirescu. (2015). Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. American Journal of Bioscience and Bioengineering, 3(3-1), 7-13. https://doi.org/10.11648/j.bio.s.2015030301.12

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ACS Style

Cristian Ravariu; Daniela Dragomirescu. Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. Am. J. BioSci. Bioeng. 2015, 3(3-1), 7-13. doi: 10.11648/j.bio.s.2015030301.12

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AMA Style

Cristian Ravariu, Daniela Dragomirescu. Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. Am J BioSci Bioeng. 2015;3(3-1):7-13. doi: 10.11648/j.bio.s.2015030301.12

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@article{10.11648/j.bio.s.2015030301.12,
  author = {Cristian Ravariu and Daniela Dragomirescu},
  title = {Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics},
  journal = {American Journal of Bioscience and Bioengineering},
  volume = {3},
  number = {3-1},
  pages = {7-13},
  doi = {10.11648/j.bio.s.2015030301.12},
  url = {https://doi.org/10.11648/j.bio.s.2015030301.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.bio.s.2015030301.12},
  abstract = {This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.},
 year = {2015}
}

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TY  - JOUR
T1  - Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics
AU  - Cristian Ravariu
AU  - Daniela Dragomirescu
Y1  - 2015/03/12
PY  - 2015
N1  - https://doi.org/10.11648/j.bio.s.2015030301.12
DO  - 10.11648/j.bio.s.2015030301.12
T2  - American Journal of Bioscience and Bioengineering
JF  - American Journal of Bioscience and Bioengineering
JO  - American Journal of Bioscience and Bioengineering
SP  - 7
EP  - 13
PB  - Science Publishing Group
SN  - 2328-5893
UR  - https://doi.org/10.11648/j.bio.s.2015030301.12
AB  - This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.
VL  - 3
IS  - 3-1
ER  -

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Author Information

Cristian Ravariu

Dept. of Electron Devices, Faculty of Electronics, Polytechnic University of Bucharest, BioNEC Group, Bucharest, Romania
Daniela Dragomirescu

CNRS LAAS, UPS, INSA, INP, ISAE, University of Toulouse, 7 avenue du colonel Roche, Toulouse, France

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APA Style

Cristian Ravariu, Daniela Dragomirescu. (2015). Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. American Journal of Bioscience and Bioengineering, 3(3-1), 7-13. https://doi.org/10.11648/j.bio.s.2015030301.12

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ACS Style

Cristian Ravariu; Daniela Dragomirescu. Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. Am. J. BioSci. Bioeng. 2015, 3(3-1), 7-13. doi: 10.11648/j.bio.s.2015030301.12

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AMA Style

Cristian Ravariu, Daniela Dragomirescu. Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. Am J BioSci Bioeng. 2015;3(3-1):7-13. doi: 10.11648/j.bio.s.2015030301.12

Copy | Download

@article{10.11648/j.bio.s.2015030301.12,
  author = {Cristian Ravariu and Daniela Dragomirescu},
  title = {Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics},
  journal = {American Journal of Bioscience and Bioengineering},
  volume = {3},
  number = {3-1},
  pages = {7-13},
  doi = {10.11648/j.bio.s.2015030301.12},
  url = {https://doi.org/10.11648/j.bio.s.2015030301.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.bio.s.2015030301.12},
  abstract = {This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics
AU  - Cristian Ravariu
AU  - Daniela Dragomirescu
Y1  - 2015/03/12
PY  - 2015
N1  - https://doi.org/10.11648/j.bio.s.2015030301.12
DO  - 10.11648/j.bio.s.2015030301.12
T2  - American Journal of Bioscience and Bioengineering
JF  - American Journal of Bioscience and Bioengineering
JO  - American Journal of Bioscience and Bioengineering
SP  - 7
EP  - 13
PB  - Science Publishing Group
SN  - 2328-5893
UR  - https://doi.org/10.11648/j.bio.s.2015030301.12
AB  - This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.
VL  - 3
IS  - 3-1
ER  -

Copy | Download