Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis

Musaver Musayev; Sedreddin Axmedov; Gurban Axmedov

doi:doi:10.11648/j.ajpa.20140203.13

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Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov

Published in American Journal of Physics and Applications (Volume 2, Issue 3)

Received: 18 May 2014 Accepted: 7 June 2014 Published: 20 June 2014

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Abstract

As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices. The effect of conditions of precipitation on clarifying properties SiOх of surface slicks for thermophotovoltaic elements on a basis Bi2Se3 and Bi2Te3 is probed. The comparison with values of a current density of short-circuit raw of thermophotovoltaic elements is conducted. The augmentation of a current density with body height of concentration of oxygen in a mixed gas is exhibited during precipitation of a film that is explained by smaller absorption of a light in a film. For the maximal augmentation of a current of short-circuit of thermophotovoltaic elements the optimum thickness of optical stratums is defined.

Published in	American Journal of Physics and Applications (Volume 2, Issue 3)
DOI	10.11648/j.ajpa.20140203.13
Page(s)	83-87
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

Thin Film, P-N the Structures, Component, Thermophotovoltaic Elements, Surface

References

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[5]	Abdullaev Q., Bakirov M., Axmedov Q., Safarov N. Silicon solar cells with anti-reflection layers of Nd2O3 and ZnS+ Nd2O3. Applied solar energy (1994) 30 (1), 15-17
[6]	Abdullaev Q., Bakirov M., Safarov N. Silicon solar cells with Ta2O5 antireflecting layer. Applied solar energy (1992) 28 (5), 8-9
[7]	Abdullaev Q., Bakirov M., Safarov N. Silicon solar cells with antireflection layers of oxide and silicon nitride, Geliotekhnika #1, (1993) 76
[8]	Bakirov M., Akhmedov G., Safarov N, Safarova F., Dzhafarova E. Influence of the direc-tion of electron beam on the rate of parameters degradation in silicon solar cells. Applied solar energy (1994) 30 (4), 19-21
[9]	Bakirov M., Akhmedov G., Safarov N, Dzhafarova E. Combined action of an electron flux and space factors on the degradation rate and reduction of silicon solar cell parameters. Applied solar energy (1996) 32 (3), 27-30
[10]	Abdullaev G., Bakirov M., Safarov N., Akhmedov G. Investigation of the effect of fast electrons on SiO2 used in silicon solar cells. Applied solar energy №3 (1994) vol 30, 13
[11]	Bayramov A., Safarov N., Akhmedov G., Shukurova V.. Thermophotovoltaic converters on the basis AVBVI for high concentration solar applicantions. International scientific journal for alternative energy and ecology. (2006) vol.5, no. 37, pp. 85-87.
[12]	Bayramov A., Safarov N., Hashimov A., Akhmedov G.. Thermophotovoltaic solar energy converters on the basis AVBVI. 2006 IEEE 4th World conference on Photovoltaic Energy Conversion, 7-12 May (2006) Hawaii, USA. PV and TPV, Systems and Components, #164.

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APA Style

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. (2014). Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis. American Journal of Physics and Applications, 2(3), 83-87. https://doi.org/10.11648/j.ajpa.20140203.13

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ACS Style

Musaver Musayev; Sedreddin Axmedov; Gurban Axmedov. Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis. Am. J. Phys. Appl. 2014, 2(3), 83-87. doi: 10.11648/j.ajpa.20140203.13

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AMA Style

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis. Am J Phys Appl. 2014;2(3):83-87. doi: 10.11648/j.ajpa.20140203.13

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@article{10.11648/j.ajpa.20140203.13,
  author = {Musaver Musayev and Sedreddin Axmedov and Gurban Axmedov},
  title = {Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis},
  journal = {American Journal of Physics and Applications},
  volume = {2},
  number = {3},
  pages = {83-87},
  doi = {10.11648/j.ajpa.20140203.13},
  url = {https://doi.org/10.11648/j.ajpa.20140203.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20140203.13},
  abstract = {As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices. The effect of conditions of precipitation on clarifying properties SiOх of surface slicks for thermophotovoltaic elements on a basis Bi2Se3 and Bi2Te3 is probed. The comparison with values of a current density of short-circuit raw of thermophotovoltaic elements is conducted. The augmentation of a current density with body height of concentration of oxygen in a mixed gas is exhibited during precipitation of a film that is explained by smaller absorption of a light in a film. For the maximal augmentation of a current of short-circuit of thermophotovoltaic elements the optimum thickness of optical stratums is defined.},
 year = {2014}
}

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TY  - JOUR
T1  - Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis
AU  - Musaver Musayev
AU  - Sedreddin Axmedov
AU  - Gurban Axmedov
Y1  - 2014/06/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ajpa.20140203.13
DO  - 10.11648/j.ajpa.20140203.13
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 83
EP  - 87
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20140203.13
AB  - As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices. The effect of conditions of precipitation on clarifying properties SiOх of surface slicks for thermophotovoltaic elements on a basis Bi2Se3 and Bi2Te3 is probed. The comparison with values of a current density of short-circuit raw of thermophotovoltaic elements is conducted. The augmentation of a current density with body height of concentration of oxygen in a mixed gas is exhibited during precipitation of a film that is explained by smaller absorption of a light in a film. For the maximal augmentation of a current of short-circuit of thermophotovoltaic elements the optimum thickness of optical stratums is defined.
VL  - 2
IS  - 3
ER  -

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Author Information

Musaver Musayev

Department of Physics, Azerbaijan State Oil Academy, Baku, Azerbaijan
Sedreddin Axmedov

Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan
Gurban Axmedov

Institute of Physics of Azerbaijan NAS, Baku, Azerbaijan

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APA Style

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. (2014). Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis. American Journal of Physics and Applications, 2(3), 83-87. https://doi.org/10.11648/j.ajpa.20140203.13

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ACS Style

Musaver Musayev; Sedreddin Axmedov; Gurban Axmedov. Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis. Am. J. Phys. Appl. 2014, 2(3), 83-87. doi: 10.11648/j.ajpa.20140203.13

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AMA Style

Musaver Musayev, Sedreddin Axmedov, Gurban Axmedov. Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis. Am J Phys Appl. 2014;2(3):83-87. doi: 10.11648/j.ajpa.20140203.13

Copy | Download

@article{10.11648/j.ajpa.20140203.13,
  author = {Musaver Musayev and Sedreddin Axmedov and Gurban Axmedov},
  title = {Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis},
  journal = {American Journal of Physics and Applications},
  volume = {2},
  number = {3},
  pages = {83-87},
  doi = {10.11648/j.ajpa.20140203.13},
  url = {https://doi.org/10.11648/j.ajpa.20140203.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpa.20140203.13},
  abstract = {As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices. The effect of conditions of precipitation on clarifying properties SiOх of surface slicks for thermophotovoltaic elements on a basis Bi2Se3 and Bi2Te3 is probed. The comparison with values of a current density of short-circuit raw of thermophotovoltaic elements is conducted. The augmentation of a current density with body height of concentration of oxygen in a mixed gas is exhibited during precipitation of a film that is explained by smaller absorption of a light in a film. For the maximal augmentation of a current of short-circuit of thermophotovoltaic elements the optimum thickness of optical stratums is defined.},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - Physical Properties of the Films Вi2Te3-Bi2Se3 and Thermophotovoltaic Elements on their Basis
AU  - Musaver Musayev
AU  - Sedreddin Axmedov
AU  - Gurban Axmedov
Y1  - 2014/06/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ajpa.20140203.13
DO  - 10.11648/j.ajpa.20140203.13
T2  - American Journal of Physics and Applications
JF  - American Journal of Physics and Applications
JO  - American Journal of Physics and Applications
SP  - 83
EP  - 87
PB  - Science Publishing Group
SN  - 2330-4308
UR  - https://doi.org/10.11648/j.ajpa.20140203.13
AB  - As a result of work are received p-n heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that film p-n the structures received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices. The effect of conditions of precipitation on clarifying properties SiOх of surface slicks for thermophotovoltaic elements on a basis Bi2Se3 and Bi2Te3 is probed. The comparison with values of a current density of short-circuit raw of thermophotovoltaic elements is conducted. The augmentation of a current density with body height of concentration of oxygen in a mixed gas is exhibited during precipitation of a film that is explained by smaller absorption of a light in a film. For the maximal augmentation of a current of short-circuit of thermophotovoltaic elements the optimum thickness of optical stratums is defined.
VL  - 2
IS  - 3
ER  -

Copy | Download