In this work, we investigate the Raman spectrum of gated monolayer and bilayer graphene devices. We used Raman spectroscopy with three different excitation wavelengths: (488nm, 514nm and 633nm). After producing graphene sheets by scotch tape technique, Raman spectrometry used to distinguish between bilayer, mono layer and other few layer of graphene. We contact the wires on the flakes using micro-soldering method then we applied gate voltage on monolayer and bilayer graphene and investigate the changes in peak of the Raman spectra in different wavelengths in different voltages. Raman spectroscopy probes phonons as well as electronic states. If the electronic dispersion changes, the Raman spectrum will also changes. The shifts of the Raman spectra peaks of the monolayer and bilayer are explained in the current work. Charge carrier concentration as a function of gate voltage in gated graphene is shown as well as the position of the G peak and 2D peak graphene versus gate voltage. For monolayer devices we observed the expected behavior for doped devices. For bilayer devices, we present a comparison between the theoretical model and our experimental results.
| Published in | American Journal of Modern Physics (Volume 3, Issue 4) |
| DOI | 10.11648/j.ajmp.20140304.13 |
| Page(s) | 168-172 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2014. Published by Science Publishing Group |
Monolayer Graphene, Bilayer Graphene, Raman Spectroscopy, Nanoelectronics
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APA Style
Maedeh Arvani, Mahdi Aghajanloo. (2014). Multi-Wavelength Raman Characterization of Back-Gated Monolayer and Bilayer Graphene. American Journal of Modern Physics, 3(4), 168-172. https://doi.org/10.11648/j.ajmp.20140304.13
ACS Style
Maedeh Arvani; Mahdi Aghajanloo. Multi-Wavelength Raman Characterization of Back-Gated Monolayer and Bilayer Graphene. Am. J. Mod. Phys. 2014, 3(4), 168-172. doi: 10.11648/j.ajmp.20140304.13
AMA Style
Maedeh Arvani, Mahdi Aghajanloo. Multi-Wavelength Raman Characterization of Back-Gated Monolayer and Bilayer Graphene. Am J Mod Phys. 2014;3(4):168-172. doi: 10.11648/j.ajmp.20140304.13
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Download@article{10.11648/j.ajmp.20140304.13,
author = {Maedeh Arvani and Mahdi Aghajanloo},
title = {Multi-Wavelength Raman Characterization of Back-Gated Monolayer and Bilayer Graphene},
journal = {American Journal of Modern Physics},
volume = {3},
number = {4},
pages = {168-172},
doi = {10.11648/j.ajmp.20140304.13},
url = {https://doi.org/10.11648/j.ajmp.20140304.13},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20140304.13},
abstract = {In this work, we investigate the Raman spectrum of gated monolayer and bilayer graphene devices. We used Raman spectroscopy with three different excitation wavelengths: (488nm, 514nm and 633nm). After producing graphene sheets by scotch tape technique, Raman spectrometry used to distinguish between bilayer, mono layer and other few layer of graphene. We contact the wires on the flakes using micro-soldering method then we applied gate voltage on monolayer and bilayer graphene and investigate the changes in peak of the Raman spectra in different wavelengths in different voltages. Raman spectroscopy probes phonons as well as electronic states. If the electronic dispersion changes, the Raman spectrum will also changes. The shifts of the Raman spectra peaks of the monolayer and bilayer are explained in the current work. Charge carrier concentration as a function of gate voltage in gated graphene is shown as well as the position of the G peak and 2D peak graphene versus gate voltage. For monolayer devices we observed the expected behavior for doped devices. For bilayer devices, we present a comparison between the theoretical model and our experimental results.},
year = {2014}
}
TY - JOUR T1 - Multi-Wavelength Raman Characterization of Back-Gated Monolayer and Bilayer Graphene AU - Maedeh Arvani AU - Mahdi Aghajanloo Y1 - 2014/07/20 PY - 2014 N1 - https://doi.org/10.11648/j.ajmp.20140304.13 DO - 10.11648/j.ajmp.20140304.13 T2 - American Journal of Modern Physics JF - American Journal of Modern Physics JO - American Journal of Modern Physics SP - 168 EP - 172 PB - Science Publishing Group SN - 2326-8891 UR - https://doi.org/10.11648/j.ajmp.20140304.13 AB - In this work, we investigate the Raman spectrum of gated monolayer and bilayer graphene devices. We used Raman spectroscopy with three different excitation wavelengths: (488nm, 514nm and 633nm). After producing graphene sheets by scotch tape technique, Raman spectrometry used to distinguish between bilayer, mono layer and other few layer of graphene. We contact the wires on the flakes using micro-soldering method then we applied gate voltage on monolayer and bilayer graphene and investigate the changes in peak of the Raman spectra in different wavelengths in different voltages. Raman spectroscopy probes phonons as well as electronic states. If the electronic dispersion changes, the Raman spectrum will also changes. The shifts of the Raman spectra peaks of the monolayer and bilayer are explained in the current work. Charge carrier concentration as a function of gate voltage in gated graphene is shown as well as the position of the G peak and 2D peak graphene versus gate voltage. For monolayer devices we observed the expected behavior for doped devices. For bilayer devices, we present a comparison between the theoretical model and our experimental results. VL - 3 IS - 4 ER -
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